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STF26NM60N

N-Channel MDmesh?, 600V/650V, STMicroelectronics

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  • 封装: TO-220F
  • 品牌: STMicroelectronics
  • 日期代码: 18+
  • 频道类型: N
  • 最大连续漏极电流: 20 A
  • 最大漏源电压: 600 V
  • 最大漏源电阻: 165 mΩ
  • 最大门限电压: 4V
  • 最小门限电压: 2V
  • 最大栅源电压: -25 V, +25 V
  • 封装类型: TO-220FP
  • 安装类型: Through Hole
  • 引脚数: 3
  • 晶体管配置: Single
  • 频道模式: Enhancement
  • 类别: Power MOSFET
  • 最大功率耗散: 35 W
  • 典型的关断延迟时间: 85 ns
  • 宽度: 4.6mm
  • 每芯片元件数量: 1
  • 外形尺寸: 10.4 x 4.6 x 16.4mm
  • 晶体管材料: Si
  • 系列: MDmesh
  • 长度: 10.4mm
  • 典型的导通延迟时间: 13 ns
  • 高度: 16.4mm
  • 最大工作温度: +150 °C
  • 典型输入电容@ Vds: 1800 pF@ 50 V
  • 典型的门电荷@ Vgs: 60 nC @ 10 V
  • ≥1: US $2.26 US $2.04
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ShenZhen HaiChuangDa Electronics Co.,Ltd

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N-Channel MDmesh?, 600V/650V, STMicroelectronics

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