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IRLML5103TRPBF

MOSFET, Power
P-Ch
VDSS -30V
RDS(ON) 0.6Ohm
ID -0.76A
Micro3
PD 540mW
VGS +/-20V RoHS : true

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  • 封装: SOT23-3
  • 品牌: IOR
  • 日期代码: 1802+
  • 频道类型: P
  • 最大连续漏极电流: 760 mA
  • 最大漏源电压: 30 V
  • 最大漏源电阻: 600 mΩ
  • 最大门限电压: 1V
  • 最小门限电压: 1V
  • 最大栅源电压: -20 V, +20 V
  • 封装类型: SOT-23
  • 安装类型: Surface Mount
  • 晶体管配置: Single
  • 引脚数: 3
  • 频道模式: Enhancement
  • 类别: Power MOSFET
  • 最大功率耗散: 540 mW
  • 长度: 3.04mm
  • 典型输入电容@ Vds: 75 pF @ 25 V
  • 典型的门电荷@ Vgs: 3.4 nC @ 10 V
  • 典型的导通延迟时间: 10 ns
  • 最小工作温度: -55 °C
  • 系列: HEXFET
  • 高度: 1.02mm
  • 宽度: 1.4mm
  • 典型的关断延迟时间: 23 ns
  • 外形尺寸: 3.04 x 1.4 x 1.02mm
  • 晶体管材料: Si
  • 最大工作温度: +150 °C
  • 每芯片元件数量: 1
  • ≥1: US $0.19699 US $0.17729
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Shenzhen Wansheng Electronics Co., Ltd.

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包装

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数据手册

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET? power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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